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| 1.5KE Series and 1N6267 thru 1N6303A Vishay Semiconductors formerly General Semiconductor TRANSZORB(R) Transient Voltage Suppressors Case Style 1.5KE ded ge ten Ran Ex e Features ltag Vo V(BR) Unidirectional 6.8 to 540V V(BR) Bidirectional 6.8 to 440V Peak Pulse Power 1500W 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. * Underwriters Laboratory Recognition under UL standard for safety 497B: Isolated Loop Circuit Protection * Glass passivated junction * 1500W peak pulse power capabililty on 10/1000s waveform, repetition rate (duty cycle): 0.05% * Excellent clamping capability * Low incremental surge resistance * Very fast response time * Includes 1N6267 thru 1N6303A 0.375 (9.5) 0.285 (7.2) Mechanical Data Case: Molded plastic body over passivated junction Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 265C/10 seconds, 0.375" (9.5mm) lead length, 5lbs. (2.3 kg) tension Polarity: For unidirectional types the color band denotes the cathode, which is positive with respect to the anode under normal TVS operation Mounting Position: Any Weight: 0.045 oz., 1.2 g Flammability: Epoxy is rated UL 94V-0 Packaging Codes - Options (Antistatic): 51 - 1K per Bulk box, 10K/carton 54 - 1.4K per 13" paper Reel (52mm horiz. tape), 4.2K/carton 73 - 1K per horiz. tape & Ammo box, 10K/carton Dimensions in inches and (millimeters) 1.0 (25.4) MIN. 0.042 (1.07) 0.038 (0.96) DIA. Devices for Bidirectional Applications For bi-directional, use C or CA suffix for types 1.5KE6.8 thru types 1.5KE440 (e.g. 1.5KE6.8C, 1.5KE440CA). Electrical characteristics apply in both directions. Maximum Ratings and Characteristics Parameter Peak power dissipation with a 10/1000s waveform Peak pulse current wih a 10/1000s waveform Steady state power dissipation at TL = 75OC, lead lengths 0.375" (9.5mm)(2) Peak forward surge current, 8.3ms single half sine-wave unidirectional only (3) Maximum instantaneous forward voltage at 100A for unidirectional only (4) Typical thermal resistance junction-to-lead Typical thermal resistance junction-to-ambient Operating junction and storage temperature range Notes: (1) (2) (3) (4) (1) (1) (TA = 25C unless otherwise noted) Symbol (Fig. 1) Limit 1500 See Next Table 6.5 200 3.5/5.0 20 75 -55 to +175 Unit W A W A V C/W C/W O PPPM IPPM PM(AV) IFSM VF RJL RJA TJ, TSTG C Non-repetitive current pulse, per Fig.3 and derated above TA = 25C per Fig. 2 Mounted on copper pad area of 1.6 x 1.6" (40 x 40mm) per Fig. 5 Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum VF = 3.5V for 1.5KE220(A) & below; VF = 5.0V for 1.5KE250(A) & above Document Number 88301 30-Oct-02 www.vishay.com 1 1.5KE Series and 1N6267 thru 1N6303A Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TA = 25C unless otherwise noted) JEDEC Type Number 1N6267 1N6267A 1N6268 1N6268A 1N6269 1N6269A 1N6270 1N6270A 1N6271 1N6271A 1N6272 1N6272A 1N6273 1N6273A 1N6274 1N6274A 1N6275 1N6275A 1N6276 1N6276A 1N6277 1N6277A 1N6278 1N6278A 1N6279 1N6279A 1N6280 1N6280A 1N6281 1N6281A 1N6282 1N6282A 1N6283 1N6283A 1N6284 1N6284A 1N6285 1N6285A 1N6286 1N6286A 1N6287 1N6287A 1N6288 1N6288A 1N6289 1N6289A 1N6290 1N6290A 1N6291 1N6291A 1N6292 General Semiconductor Part Number +1.5KE6.8 +1.5KE6.8A +1.5KE7.5 +1.5KE7.5A +1.5KE8.2 +1.5KE8.2A +1.5KE9.1 +1.5KE9.1A +1.5KE10 +1.5KE10A +1.5KE11 +1.5KE11A +1.5KE12 +1.5KE12A +1.5KE13 +1.5KE13A +1.5KE15 +1.5KE15A +1.5KE16 +1.5KE16A +1.5KE18 +1.5KE18A +1.5KE20 +1.5KE20A +1.5KE22 +1.5KE22A +1.5KE24 +1.5KE24A +1.5KE27 +1.5KE27A +1.5KE30 +1.5KE30A +1.5KE33 +1.5KE33A +1.5KE36 +1.5KE36A +1.5KE39 +1.5KE39A +1.5KE43 +1.5KE43A +1.5KE47 +1.5KE47A +1.5KE51 +1.5KE51A +1.5KE56 +1.5KE56A +1.5KE62 +1.5KE62A +1.5KE68 +1.5KE68A +1.5KE75 Breakdown Voltage V(BR) at IT (1) (V) Min 6.12 6.45 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.5 10.8 11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 38.7 40.9 42.3 44.7 45.9 48.5 50.4 53.2 55.8 58.9 61.2 64.6 67.5 Max 7.48 7.14 8.25 7.88 9.02 8.61 10.0 9.55 11.0 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.5 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 42.9 41.0 47.3 45.2 51.7 49.4 56.1 53.6 61.8 58.8 68.2 65.1 74.8 71.4 82.5 Test Current IT (mA) 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Stand-off Voltage VWM (V) 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.2 10.5 11.1 12.1 12.8 12.9 13.6 14.5 15.3 16.2 17.1 17.8 18.8 19.4 20.5 21.8 23.1 24.3 25.6 26.8 28.2 29.1 30.8 31.6 33.3 34.8 36.8 38.1 40.2 41.3 43.6 45.4 47.8 50.2 53.0 55.1 58.1 60.7 Maximum Reverse Leakage at VWM ID(4) (A) 1000 1000 500 500 200 200 50 50 10 10 5.0 5.0 5.0 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum Peak Pulse Current IPPM(2) (A) 139 143 128 133 120 124 109 112 100 103 92.6 96.2 86.7 89.8 78.9 82.4 68.2 70.8 63.8 66.7 56.6 59.5 51.5 54.2 47.0 49.0 43.2 45.2 38.4 40.0 34.5 36.2 31.4 32.8 28.8 30.1 26.6 27.8 24.2 25.3 22.1 23.1 20.4 21.4 18.6 19.5 16.9 17.6 15.3 16.3 13.9 Maximum Clamping Voltage at IPPM VC (V) 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.2 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 61.9 59.3 67.8 64.8 73.5 70.1 80.5 77.0 89.0 85.0 98.0 92.0 109 Maximum Temp. Coefficient of V(BR) (% / C) 0.057 0.057 0.061 0.061 0.065 0.065 0.068 0.068 0.073 0.073 0.075 0.075 0.076 0.078 0.081 0.081 0.084 0.084 0.086 0.086 0.088 0.089 0.090 0.090 0.092 0.092 0.094 0.094 0.096 0.096 0.097 0.097 0.098 0.098 0.099 0.099 0.100 0.100 0.101 0.101 0.101 0.101 0.102 0.102 0.103 0.103 0.104 0.104 0.104 0.104 0.105 www.vishay.com 2 Document Number 88301 30-Oct-02 1.5KE Series and 1N6267 thru 1N6303A Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (Cont'd) JEDEC Type Number 1N6292A 1N6293 1N6293A 1N6294 1N6294A 1N6295 1N6295A 1N6296 1N6296A 1N6297 1N6297A 1N6298 1N6298A 1N6299 1N6299A 1N6300 1N6300A 1N6301 1N6301A 1N6302 1N6302A 1N6303 1N6303A General Semiconductor Part Number +1.5KE75A +1.5KE82 +1.5KE82A +1.5KE91 +1.5KE91A +1.5KE100 +1.5KE100A +1.5KE110 +1.5KE 110A +1.5KE120 +1.5KE120A +1.5KE130 +1.5KE130A +1.5KE150 +1.5KE150A +1.5KE160 +1.5KE160A +1.5KE170 +1.5KE170A 1.5KE180 1.5KE180A 1.5KE200 1.5KE200A* 1.5KE220 1.5KE220A* 1.5KE250 1.5KE250A 1.5KE300 1.5KE300A 1.5KE350 1.5KE350A 1.5KE400 1.5KE400A 1.5KE440 1.5KE440A 1.5KE480 1.5KE480A 1.5KE510 1.5KE510A 1.5KE540 1.5KE540A Breakdown Voltage V(BR) at IT (1) (V) Min 71.3 73.8 77.9 81.9 86.5 90.0 95.0 99.0 105 108 114 117 124 136 143 144 152 153 162 162 171 180 190 198 209 225 237 270 285 315 333 360 380 396 418 432 456 459 485 486 513 Max 78.8 90.2 86.1 100.0 95.5 110 105 121 116 132 126 143 137 165 158 176 168 187 179 198 189 220 210 242 231 275 263 330 315 385 368 440 420 484 462 528 504 561 535 594 567 (TA = 25C unless otherwise noted) Test Current IT (mA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Stand-off Voltage VWM (V) 64.1 66.4 70.1 73.7 77.8 81.0 85.5 89.2 94.0 97.2 102 105 111 121 128 130 136 138 145 146 154 162 171 175 185 202 214 243 256 284 300 324 342 356 376 389 408 413 434 437 459 Maximum Reverse Leakage at VWM ID(4) (A) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum Peak Pulse Current IPPM(2) (A) 14.6 12.7 13.3 11.5 12.0 10.4 10.9 9.5 9.9 8.7 9.1 8.0 8.4 7.0 7.2 6.5 6.8 6.1 6.4 5.8 6.1 5.2 5.5 4.4 4.6 4.2 4.4 3.5 3.6 3.0 3.1 2.6 2.7 2.4 2.5 2.19 2.28 2.06 2.15 1.94 2.03 Maximum Clamping Voltage at IPPM VC (V) 104 118 113 131 125 144 137 158 152 173 165 187 179 215 207 230 219 244 234 258 246 287 274 344 328 360 344 430 414 504 482 574 548 631 602 686 658 729 698 772 740 Maximum Temp. Coefficient of V(BR) (% / C) 0.105 0.105 0.105 0.106 0.106 0.106 0.106 0.107 0.107 0.107 0.107 0.107 0.107 0.108 0.106 0.106 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 Notes: (1) Pulse test: tp 50ms (2) Surge current waveform per Fig. 3 and derate per Fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE CA62.35 (4) For bidirectional types with VR 10 volts and less the ID limit is doubled * Bidirectional versions are UL approved under component across the line protection, ULV1414 file number E108274 (1.5KE200CA, 1.5KE220CA) + Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both uni-directional and bi-directional devices Application * This series of Silicon Transient Suppressors is used in applications where large voltage transients can permanently damage voltage-sensitive components. * The TVS diode can be used in applications where induced lightning on rural or remote transmission lines presents a hazard to electronic circuitry (ref: R.E.A. specification P.E. 60). * This Transient Voltage Suppressor diode has a pulse power rating of 1500 watts for one millisecond. The response time of TVS diode clamping action is effectively instantaneous (1 x 10-9 seconds bidirectional); therefore, they can protect integrated circuits, MOS devices, hybrids, and other voltage sensitive semiconductors and components. TVS diodes can also be used in series or parallel to increase the peak power ratings. Document Number 88301 30-Oct-02 www.vishay.com 3 1.5KE Series and 1N6267 thru 1N6303A Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Peak Pulse Power Rating Curve 100 Fig. 2 - Pulse Derating Curve Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % 100 PPPM -- Peak Pulse Power (kW) 75 10 50 1 25 0.1 0.1s 1.0s 10s 100s 1.0ms 10ms 0 0 25 50 75 100 125 150 175 200 td -- Pulse Width (sec.) TA -- Ambient Temperature (C) Fig. 3 - Pulse Waveform 150 10,000 tr = 10sec. Peak Value IPPM TJ = 25C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM Fig. 4 - Typical Junction Capacitance Unidirectional Bidirectional VR = 0 1,000 IPPM -- Peak Pulse Current, % IRSM 100 Half Value -- IPP 2 IPPM 50 10/1000sec. Waveform as defined by R.E.A. CJ, Capacitance, pF 100 VR = Rated Stand-off Voltage f = 1 MHz Vsig = 50mVp-p TJ = 25C 5 10 100 500 td 0 10 0 1.0 2.0 3.0 4.0 t -- Time (ms) V(BR), Breakdown Voltage (V) Fig. 5 - Steady State Power Derating Curve PM(AV), Steady State Power Dissipation (W) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 25 50 75 100 125 150 175 200 1.6 x 1.6 x .040" (40 x 40 x 1mm) Copper Heat Sinks L = 0.375" (9.5mm) Lead Lengths Fig. 6 - Maximum Non-repetitive Peak Forward Surge Current Unidirectional Only 200 Peak Forward Surge Current (A) 60 HZ Resistive or Inductive Load 8.3ms Single Half Sine-Wave (JEDEC Method) TJ = TJ max. 100 10 1 10 100 TL -- Lead Temperature (C) www.vishay.com 4 Number of Cycles at 60 HZ Document Number 88301 30-Oct-02 1.5KE Series and 1N6267 thru 1N6303A Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 7 - Incremental Clamping Voltage Curve (Unidirectional) 100 VC, Incremental Clamping Voltage Waveform: 8/20s Impulse VC = VC - V(BR) 1.5KE200 100 VC, Incremental Clamping Voltage Fig. 8 - Incremental Clamping Voltage Curve (Unidirectional) Waveform: 10/1000s Impulse VC = VC - V(BR) 1.5KE200 1.5KE130 1.5KE75 1.5KE130 20 10 20 10 1.5KE39 1.5KE100 1.5KE75 2.0 1.0 1.5KE39 1.5KE33 1.5KE6.8 1.5KE9.1 1.5KE18 1.5KE12 2.0 1.0 1.5KE33 1.5KE6.8 1.5KE9.1 0.2 0.1 0.5 1 2.0 10 20 IPP, Peak Pulse Current (A) 50 0.2 0.1 0.5 1 2.0 10 IPP, Peak Pulse Current (A) 50 Fig. 7 - Incremental Clamping Voltage Curve (Bidirectional) 100 VC, Incremental Clamping Voltage Waveform: 8/20s Impulse VC = VC - V(BR) 1.5KE200C 100 VC, Incremental Clamping Voltage Fig. 10 - Incremental Clamping Voltage Curve (Bidirectional) Waveform: 10/1000s Impulse VC = VC - V(BR) 1.5KE200C 20 10 20 10 1.5KE75C 1.5KE39C 1.5KE30C 1.5KE75C 1.5KE39C 1.5KE30C 1.5KE15C 11C 1.5KE7.5C 2.0 1.0 2.0 1.0 1.5KE15C 1.5KE11C 1.5KE7.5C 0.2 0.1 0.5 1 10 20 2.0 IPP, Peak Pulse Current (A) 50 0.2 0.1 0.5 1 20 10 2.0 IPP, Peak Pulse Current (A) 50 Document Number 88301 30-Oct-02 www.vishay.com 5 1.5KE Series and 1N6267 thru 1N6303A Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 11 - Instantaneous Forward Voltage Characteristics Curve 100 100 Fig. 12 - Typical Transient Thermal Impedance Transient Thermal Impedance (C/W) Instantaneous Forward Current (A) 10 10 1 1 0.1 0 0.4 0.8 1.2 Pulse width = 300 s 1% Duty Cycle TJ = 25 C 1.6 2.0 0.1 0.001 0.01 0.1 1 10 100 1000 Instantaneous Forward Voltage (V) tp - Pulse Duration (sec) Fig. 13 - Typical Reverse Leakage Characteristics 1000 Reverse Leakage Current (A) 100 10 1.0 0.1 0.01 0 100 200 300 400 500 600 Breakdown Voltage (V) www.vishay.com 6 Document Number 88301 30-Oct-02 |
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